e/Hybrid vapour phase epitaxy

Information
has gloss	eng: Hybrid Vapour Phase Epitaxy (HVPE) is used for high rate crystal growth. For example during Gallium nitride growth, HVPE uses ammonia(NH3), and GaCl2, which is formed by Hydrogen chloride flowing over Gallium melt, as sources with purified N2 as carrier gas. The growth is typically performed at very high temperature, such as 1100 oC.
lexicalization	eng: Hybrid vapour phase epitaxy
instance of	e/Crystal