e/Leakage (semiconductors)

Information
has gloss	eng: In semiconductor devices, leakage is a quantum phenomenon where mobile charge carriers (electrons or holes) tunnel through an insulating region. Leakage increases exponentially as the thickness of the insulating region decreases. Tunneling leakage can also occur across semiconductor junctions between heavily doped P-type and N-type semiconductors. Other than tunneling via the gate insulator or junctions, carriers can also leak between source and drain terminals of a Metal Oxide Semiconductor (MOS) transistor. This is called Subthreshold leakage. The primary source of leakage occurs inside transistors, but electrons can also leak between interconnects. Leakage increases power consumption and if sufficiently large can cause complete circuit failure.
lexicalization	eng: leakage
instance of	c/Electrical parameters